PART |
Description |
Maker |
FS30KMH-2 |
Power MOSFETs: FS Series, Low Voltage, 100V for High-Speed Switching Use Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation Powerex Power Semiconductors
|
2SK1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
|
TOSHIBA[Toshiba Semiconductor]
|
2SD2584 EE08394 |
HIGH POWER SWITCHING APPLICATIONS From old datasheet system NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
|
http:// TOSHIBA[Toshiba Semiconductor]
|
HAT1055R HAT1055RJ |
Transistors>Switching/MOSFETs Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
FS10UM-12 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE DC SWITCHING POWER SUPPLY PROGRAMMABLE 1-40VDC 0-5A
|
Mitsubishi Electric Corporation Powerex Power Semiconductors
|
MP4401 E002512 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
|
Toshiba
|
MP4201 E002500 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
|
Toshiba
|
MP4401 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS / HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
|
Toshiba Semiconductor
|
2SA1776 2SA1727 2SA1812 A5800343 2SA18121 |
High-voltage Switching Transistor (Telephone power supply) High-voltage Switching Transistor (Telephone power supply) (-400V/ -0.5A) High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) High-voltage Switching Transistor (Telephone power supply) (-400V -0.5A) From old datasheet system Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) High-voltage Switching Transistor ( 400V, 0.5A)
|
ROHM[Rohm]
|
MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor Toshiba Corporation
|
QM75E3Y-H QM75E2Y-H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型 MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
BD9130NV BD9130NV09 BD9130NV-E2 |
2 A SWITCHING REGULATOR, 1200 kHz SWITCHING FREQ-MAX, DSO8 5 X 6 MM, 1.27 MMPITCH, LEAD FREE, SON-8 Output 2A or More High-efficiency Step-down Switching Regulator with Built-in Power MOSFET
|
Rohm
|